static drain-source on-resistance что это

 

 

 

 

Static Drain-Source On-State RDS(on) Resistance (1). 20 .3-432. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. ( 3 ). ID - Drain Current (Amps). STATIC. LIMITS.Drain-Source On-State Resistance1. V(BR)DSS VGS(th) IGSS IDSS. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, powerStatic DrainSource OnResistance. Static Drain-Source On-State Resistance. -- -- 2.5 vgs10V,ID2A.100 101. VDS , Drain-Source Voltage [V]. Fig 3. On-Resistance vs. Drain Current. This looks allot like the work of >"The Center of Confusion". -) One hint that something is seriously wrong is that a graph called " Static drain-source on resistance" does not have ohms as the units for the dependent variable. STATIC. Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current.Normalized Drain to Source ON-Resistance.

A. RDS(ON) Static Drain-Source On-Resistance.DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance. Static Drain-source On Resistance.Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics. Static Drain-to-Source On-Resistance.

VGS(th) gfs. IDSS.Source-Drain Ratings and Characteristics. Parameter IS Continuous Source Current. (Body Diode) ISM Pulsed Source Current. Static DrainSource OnResistance.ID, drain current (a). RDS(on), normalized drain-source on-resistance. 12 vgs 4.5V. Max. Static Characteristics. BVDSS Drain-Source Breakdown Voltage VGS0V, IDS250A.RDS(ON) Drain-Source On-state Resistance VGS10V, IDS40A. 68. Diode Characteristics. Static Drain-Source On-State RDS(on) Resistance (1). 14 . VGS-10V,ID-200mA.On-resistance vs Drain Current. Normalised RDS(on) and VGS(th). 2.6. Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage. SOURCE CURRENT : Is (A).Fig.6 Source Current vs. Source-Drain Voltage. STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m). RDS(on) Static Drain-to-Source On-Resistance 1,2 - сопротивление транзистора во включенном состоянии. VGS(th) Gate Threshold Voltage 4.0v - напряжение заствор-исток переключения транзистора в проводящее состояние. Static Drain-Source On-Resistance. : RDS(on) 0.015(Max). DESCRIPTION. Suitable as primary switch in advanced high-efficiency, high Rds(on) Static Drain-to-Source On-Resistance — сопротивление сток-исток открытого канала при температуре 25C, в данном случае, составляет 0,27 Ом. Оно зависит от температуры, но об этом позже. Static Characteristics. BVDSS IDSS IGSS VGS(th).RDS(on) Drain to Source On Resistance. gfs Transconductance Dynamic Characteristics. CISS COSS CRSS Rg Qg Qgd Qgs Qg(th). Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation TC 25 C.Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c. Static Drain-Source On-Resistance2.Fig 1. Typical Output Characteristics. Rds(on) - Normalized Drain - Source On-Resistance. On-Resistance Variation with Temperature Vgs4.5V, Ids4A.

VDSS (Drain-to-Source Voltage) напряжение между стоком и истоком. Это, как правило, напряжение питания вашей схемы. При подборе транзистора всегда необходимо помнить о 20 запасе. Thermal Resistance. Symbol.Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance. Static Drain-to-Source On-Resistance. VGS(th) gfs. Gate Threshold Voltage Forward Transconductance. IDSS Drain-to-Source Leakage Current. IGSS. Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss. Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time. One of the most prominent specifications on datasheets for discrete MOSFETs is the drain-to-source on-state resistance, abbreviated as RDS(on). This RDS(on) idea seems so pleasantly simple: When the FET is in cutoff, the resistance between source and drain is extremely Static DraintoSource OnResistance (VGS 10 Vdc, ID 6.0 Adc). (Cpk 1.5) (Note 3.) RDS(on).Sourcedrain diode characteristics. Forward OnVoltage (Note 1.) Static Drain-Source On-State RDS(on) Resistance (1).Width300s. Duty cycle 2 (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits whereDrain Current VS Drain-Source voltage. R ON Resistance(mOhm) DS(ON). Для AP70L02: RDS(ON) Static Drain-Source On-Resistance VGS10V, ID33A - - 9 m VGS4.5V, ID20A - - 18 m Я когда подбираю замену мосфету по питанию CPU, то стараюсь брать с сопротивлением перехода равным или меньшим исходного мосфета. Static Drain-Source On-State Resistance RDS(on) [m]. Fig.8 Typical Transfer Characteristics. 100 VDS10V pulsed. RDS(ON) Static Drain-Source On-Resistance.B. The power dissipation PD is based on TJ(MAX)150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. Static Drain-Source On-Resistance2 VGS10V, ID12A.V SD , Source-to-Drain Voltage (V). Fig 5. Forward Characteristic of Reverse Diode. Table 4. On/off states Test conditions. V(BR)DSS. Drain-source breakdown voltage (VGS 0).Gate body leakage current (VDS 0) Gate threshold voltage. Static drain- source on resistance. Static Drain-source On Resistance.Normalized On Resistance vs Temperature. Source-drain Diode Forward Characteristics. 5/8. IRF840. Static Drain-to-Source On-Resistance (Note 3) (VGS 10 Vdc, ID 35 Adc) (VGS 4.5 Vdc, ID 20 Adc). Symbol V(BR)DSS. IDSS IGSS VGS(th). RDS(on). Forward Transconductance (VDS 15 Vdc, ID 10 Adc) (Note 3) DYNAMIC CHARACTERISTICS. И да, кстати, судя по даташиту получаем это: RDS(on) Static Drain-to- Source On-Resistance 0.117 , VGS -10V, ID -11A Питал все от 11В, на завторах было -8, но тем не менее при токах 8А мосфетики делали печечку мгновенно Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2.IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss. Forward Transconductance. Drain-Source Leakage Current (T j 25 o C) Drain-Source Leakage Current (T j 70 o C). Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c.Turn-Off Fall Time. tf. Total Gate Charge Gate-Source Charge Gate-Drain Charge. Qg Qgs. VDS 15V, ID 16A, VGS 5V. Qgd. RDS(ON) Drain-Source On-Resistance. VGS(th) Gate-Threshold Voltage. IGSS Gate-Body Leakage.tf Turn-Off Fall Time. SOURCE-DRAIN DIODE. IS Max.Diode Forward Current. Static Drain-to-Source On-Resistance. VGS(th) gfs.Source-Drain Ratings and Characteristics. Parameter IS Continuous Source Current. (Body Diode) ISM Pulsed Source Current. Static Characteristics BVDSS Drain-Source Breakdown Voltage. IDSS Zero Gate Voltage Drain Current. VGS(th).Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance. Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2.V DS , Drain-to-Source Voltage (V). Fig 8. Typical Capacitance Characteristics. 1 Duty factor0.5. Gate Threshold Voltage Static Drain-Source On-Resistance.RDS(on) , normalized drain-source on-resistance. Typical Electrical Characteristics. -5 VGS -10V. Definition TrenchFET Power MOSFET Low On-Resistance 100 Rg Tested Compliant to RoHS Directive 2002/95/EC.Static. Drain-Source Breakdown Voltage VDS VGS 0 V, ID 250 A. Static Drain-Source On-Resistance.m S V A. DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance. Static 3). Drain-Source Breakdown Voltage. BVDSS VGS 0V, ID 250uA.0.15. 1234 VDS Drain-to-Source Voltage (V). On-Resistance vs. Drain Current. Static Drain-Source On-State Resistance RDS(on) [W]. Gate Threshold Voltage : VGS(th) [V]. Data Sheet.Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 1.2 VGS10V pulsed 1. On state drain current. VGS10V, VDS5V. 120. A. RDS(ON) Static Drain- Source On-Resistance.B. The power dissipation PD is based on TJ(MAX)150C, using 10s junction-to-ambient thermal resistance. С английского на: Немецкий. drain-source on-state resistance. Толкование Перевод.- short-circuit output capacitance - short-circuit transfer capacitance - sizable stray capacitance - space-charge-layer capacitance - spurious capacitance - static capacitance - storage capacitance - straight-line Static Drain-Source On-Resistance VGS10V, ID5A. Gate Threshold Voltage.pF pF. Source-Drain Diode. Symbol VSD trr. Parameter Forward On Voltage3. Static Drain-Source On-Resistance VGS4.5V, ID18A. Gate Threshold Voltage Forward Transconductance.Fig 4. Normalized On-Resistance v.s. Junction Temperature.

Новое на сайте: